maximum ratings (t a =25c) symbol units collector-base voltage v cbo 45 v collector-emitter voltage v ceo 45 v emitter-base voltage v ebo 5.0 v collector current i c 100 ma peak collector current i cm 200 ma peak base current i bm 200 ma power dissipation p d 350 mw operating and storage junction temperature t j ,t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics (t a =25c unless otherwise noted) symbol test conditions min typ max units i cbo v cb =45v 20 na i cbo v cb =45v, t a =150c 20 a i ebo v eb =4.0v 20 na bv cbo i c =10a 45 v bv ceo i c =10ma 45 v bv ebo i e =1.0 a 5.0 v v ce(sat) i c =10ma, i b =250 a 0.06 0.25 v v ce(sat) i c =50ma, i b =1.25ma 0.12 0.55 v v be(sat) i c =10ma, i b =250 a 0.60 0.85 v v be(sat) i c =50ma, i b =1.25ma 0.68 1.05 v v be(on) v ce =5.0v, i c =2.0ma 0.60 0.75 v f t v ce =5.0v, i c =10ma, f=100mhz 100 mhz c c v cb =10v, i e =0, f=1.0mhz 4.5 pf c e v eb =0.5v, i c =0, f=1.0mhz 11 pf nf v ce =5.0v, i c =200a, r s =2.0k ? , f=1.0khz, bw=200hz 6.0 db BCX71G bcx71h bcx71j bcx71k min max min max min max min max h fe v ce =5.0v, i c =10 a - 30 40 100 h fe v ce =5.0v, i c =2.0ma 120 220 180 310 250 460 380 630 h fe v ce =1.0v, i c =50ma 60 80 100 110 bcx71 series surface mount pnp silicon transistor sot-23 case central semiconductor corp. tm r1 (20-february 2003) description: the central semiconductor bcx71 series types are pnp silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. marking codes: please see marking code table on following page
central semiconductor corp. tm sot-23 case - mechanical outline bcx71 series surface mount pnp silicon transistor r1 (20-february 2003) lead code: 1) base 2) emitter 3) collector device marking code BCX71G bg bcx71h bh bcx71j bj bcx71k bk
|
